Paper Title:
The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology
  Abstract

In this study, thin films of CaBi4Ti4O15 with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15 thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7 A/cm2 and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

  Info
Periodical
Advanced Materials Research (Volumes 239-242)
Edited by
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Pages
891-894
DOI
10.4028/www.scientific.net/AMR.239-242.891
Citation
T. F. Chien, J. H. Tsai, K. H. Chen, C. M. Cheng, C. L. Wu, "The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology", Advanced Materials Research, Vols. 239-242, pp. 891-894, 2011
Online since
May 2011
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