Paper Title:
The Ferroelectric Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices
  Abstract

In this study, we investigated that of Al/ Ba(Zr0.1Ti0.9)O3 (BZT)/Pt/Ti/SiO2/Silicon metal-ferroelectric-metal-insulator-semiconductor (MFM) ferroelectric structures and found the memory effect and capacitance of annealed BZT films during the different annealing temperature. Additionally, the capacitance and leakage current density were about 4.3 nF and 1´10-6A/cm2, respectively. From C-V curves, the ferroelectric properties and charges accumulation of annealed BZT films were also found during the annealing temperature of 700°C.

  Info
Periodical
Advanced Materials Research (Volumes 239-242)
Edited by
Zhong Cao, Xueqiang Cao, Lixian Sun, Yinghe He
Pages
895-898
DOI
10.4028/www.scientific.net/AMR.239-242.895
Citation
K. H. Chen, J. H. Tsai, C. L. Wu, J. Y. Lin, C. M. Cheng, "The Ferroelectric Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices", Advanced Materials Research, Vols. 239-242, pp. 895-898, 2011
Online since
May 2011
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$32.00
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