Paper Title:
Study on Effect of Composite Particles in Polishing Process and Its Mechanism
  Abstract

In this paper, mixed slurries containing silica abrasives and polystyrene (PS) polymer particles in deionized water at pH 10.5 have been evaluated for silicon wafer polishing. By applying the theory of electric double layer model, the effect of the particle interactions in mixed slurry is investigated. Zeta potential measurements and TEM images have been used to show the formation of composite particles. The polishing mechanism with composite particles slurries is discussed. Polishing experiments with the mixed slurries formed by coating smaller (~30nm) abrasives onto softer and larger (~2000nm) polymer particles have shown the superior characteristic with higher removal rate and high surface quality.

  Info
Periodical
Advanced Materials Research (Volumes 24-25)
Edited by
Hang Gao, Zhuji Jin and Yannian Rui
Pages
155-159
DOI
10.4028/www.scientific.net/AMR.24-25.155
Citation
X. F. Xu, B.X. Ma, F. Chen, W. Peng, "Study on Effect of Composite Particles in Polishing Process and Its Mechanism", Advanced Materials Research, Vols. 24-25, pp. 155-159, 2007
Online since
September 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Cong Rong Zhu, Bing Hai Lv, Ju Long Yuan
Abstract:Studies on chemical mechanical polishing (CMP) for silicon nitride (Si3N4) balls with CeO2 abrasive carried to investigate the mechanism of...
131
Authors: Yong Bo Wu, Kunio Shimada
Abstract:This paper deals with the machining of quartz wafers using an MCF (Magnetic Compound Fluid) polishing liquid, frozen with liquid nitrogen....
187
Authors: Han Chul Cho, Young Min Kim, Hyun Seop Lee, Suk Bae Joo, Hae Do Jeong
Abstract:Cu (copper) has been widely used for interconnection structure in integrated circuits because of its properties such as a low resistivity and...
367
Authors: Sheng Li Wang, Zhen Xia Li, Hui Lai Mu, Yu Tian, Li Bing Yang
Abstract:Chemical mechanical polishing (CMP) is the effective technology which obtains high accuracy surface of hard disk substrate with...
3067
Authors: Jian Xiu Su, Jia Xi Du, Xing Long Liu, Hai Na Liu
Abstract:SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting,...
250