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Study on Effect of Composite Particles in Polishing Process and Its Mechanism

Journal Advanced Materials Research (Volumes 24 - 25)
Volume Precision Surface Finishing and Deburring Technology
Edited by Hang Gao, Zhuji Jin and Yannian Rui
Pages 155-159
DOI 10.4028/www.scientific.net/AMR.24-25.155
Citation Xue Feng Xu et al., 2007, Advanced Materials Research, 24-25, 155
Online since September, 2007
Authors Xue Feng Xu, B.X. Ma, Feng Chen, Wei Peng
Keywords Abrasive, Composite Particle, Polishing, Silicon Wafer
Abstract

In this paper, mixed slurries containing silica abrasives and polystyrene (PS) polymer particles in deionized water at pH 10.5 have been evaluated for silicon wafer polishing. By applying the theory of electric double layer model, the effect of the particle interactions in mixed slurry is investigated. Zeta potential measurements and TEM images have been used to show the formation of composite particles. The polishing mechanism with composite particles slurries is discussed. Polishing experiments with the mixed slurries formed by coating smaller (~30nm) abrasives onto softer and larger (~2000nm) polymer particles have shown the superior characteristic with higher removal rate and high surface quality.

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