Cd1−xZnxTe (CZT) is an excellent ternary compound semiconductor. CZT is the most suitable substrate material for Hg1−yCdyTe epitaxial growth and can make the detector itself. The researchers have done a lot of works on the hard and brittle material removal mechanism in lapping process. however, no published articles are available regarding the removal mechanism and the abrasives embedding mechanism of the soft and brittle material in lapping progress .and there is its own characteristic if the hard abrasives machining the soft and brittle material in lapping progress, the objective of this paper is to build the physical model ,and divide the abrasive into four kinds of abrasives , they are two-body abrasive ,three-body abrasive ,embedded abrasive and small abrasive, and the authors analyze the effects on the material surface of the above abrasives. At last, design series of experiments, through analyzing the results and observe the surface morphology, the authors prove that the physical model is correct.