Paper Title:
A Method for Grinding Mode Identification in Grinding of Silicon Wafers
  Abstract

A new non-destructive method was developed to identify the grinding mode of silicon wafers, which is based on the information of subsurface cracks extracted from the surface topography of the ground silicon wafers measured with a 3D surface profiler. We examined extensive measurement data of the surface topography of silicon wafers processed by single grain grinding or real grinding operation, and our results show that the information about median cracks could be captured if the lateral sampling interval of the 3D surface profiler is small enough, even if the grain depth of cut is below 20nm. If the maximum valley of the measured surface topography is approximately equal to the grain depth of cut, surface formation will be under ductile mode, whereas, if the maximum valley is several times larger than the grain depth of cut, surface formation will be under brittle mode. According to this criterion, silicon wafers ground by ductile mode or brittle mode could be identified rapidly and conveniently. Experimental validation shows that this method is accurate.

  Info
Periodical
Advanced Materials Research (Volumes 24-25)
Edited by
Hang Gao, Zhuji Jin and Yannian Rui
Pages
255-260
DOI
10.4028/www.scientific.net/AMR.24-25.255
Citation
F. W. Huo, Z. J. Jin, R. K. Kang, D. M. Guo, "A Method for Grinding Mode Identification in Grinding of Silicon Wafers", Advanced Materials Research, Vols. 24-25, pp. 255-260, 2007
Online since
September 2007
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Price
$32.00
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