Paper Title:
Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography
  Abstract

The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

  Info
Periodical
Edited by
Lynn Khine and Julius M. Tsai
Pages
132-135
DOI
10.4028/www.scientific.net/AMR.254.132
Citation
N. Puttaraksa, M. Napari, O. Chienthavorn, R. Norarat, T. Sajavaara, M. Laitinen, S. Singkarat, H. J. Whitlow, "Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography", Advanced Materials Research, Vol. 254, pp. 132-135, 2011
Online since
May 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A.M. Abdul-Kader, Andrzej Turos
Abstract:Ion beam bombardment has shown great potential for improving the surface properties of polymers. In this paper, the ion beam-polymer...
149