Paper Title:
FBAR Resonators with Sufficient High Q for RF Filter Implementation
  Abstract

Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE) vibration mode. The FBAR resonator has a quality factor of about 400 and the piezoelectric coupling coefficient of 4.25%, which is critical for RF filter implementation. Moreover, FBAR resonator has been designed to suppress spurious modes in order to ensure higher quality factor. Different filter topologies of ladder/lattice architecture are then explored for effective implementation using several FBAR resonators to build band-pass RF filters.

  Info
Periodical
Edited by
Lynn Khine and Julius M. Tsai
Pages
70-73
DOI
10.4028/www.scientific.net/AMR.254.70
Citation
L. Khine, L. Y.L. Wong, J. B.W. Soon, M. L. J. Tsai, "FBAR Resonators with Sufficient High Q for RF Filter Implementation", Advanced Materials Research, Vol. 254, pp. 70-73, 2011
Online since
May 2011
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