Paper Title:
Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators
  Abstract

This paper presents an effective evaluation of piezoelectric coefficients (d31 and d33) and other mechanical properties of AlN thin films using resonator structures fabricated on a single wafer. The extracted value for d31 is 1.60pm/V and the d33 value is 3.15pm/V, which are comparable to the coefficient values published in literature. Fabrication of these resonator structures is straightforward and can be incorporated with other more complex steps. Hence, these resonators can serve as an excellent test structures to evaluate and predict the quality of AlN growth and piezoelectric properties of thin AlN films.

  Info
Periodical
Edited by
Lynn Khine and Julius M. Tsai
Pages
74-77
DOI
10.4028/www.scientific.net/AMR.254.74
Citation
L. Khine, L. Y.L. Wong, J. B.W. Soon, M. L. J. Tsai, "Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators", Advanced Materials Research, Vol. 254, pp. 74-77, 2011
Online since
May 2011
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$32.00
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