Paper Title:
New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons
  Abstract

Transformation of uniformly strained GexSi1-x layers into GeSi dots of 3 ~ 7 nm which are compositionally ordered by one or concurrently two sets of {111} planes was carried out for the first time under non-equilibrium conditions induced by 1.25 MeV electron irradiation at Tc ≥ 200 oC in the high voltage electron microscope (JEM-ARM1300S). This microscope installed in the KBSI is characterized by an excellent point-to-point resolution of 0.12 nm allowing obtaining detailed information on chemical ordering at specific parameters of defocus (-800 Å) and crystal thickness (200~250 Å) determined by extensive HRTEM image simulation for the ordered dots.

  Info
Periodical
Advanced Materials Research (Volumes 26-28)
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
1195-1198
DOI
10.4028/www.scientific.net/AMR.26-28.1195
Citation
S. A. Song, L. I. Fedina, H. S. Baik, Y. J. Kim, Y. M. Kim, A. K. Gutakovskii, A. V. Latyshev, "New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons", Advanced Materials Research, Vols. 26-28, pp. 1195-1198, 2007
Online since
October 2007
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Price
$32.00
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