Paper Title:
Femtosecond Laser Synthesis of High-Pressure Phases of Si
  Abstract

The high pressure simple hexagonal structure of silicon, which has not been synthesized, is quenched using femtosecond laser-driven shock wave. Any high-pressure phases of silicon do not remain after the pressure release in the case of the hydrostatic and conventional shock compression methods. We found the existence of the simple hexagonal structure after the intense femtosecond laser irradiation to silicon by analyzing the crystalline structures using a synchrotron grazing-incidence XRD method. Femtosecond laser-driven shock wave is a useful tool for the synthesis of non-equilibrium high-pressure phases.

  Info
Periodical
Advanced Materials Research (Volumes 26-28)
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
1291-1294
DOI
10.4028/www.scientific.net/AMR.26-28.1291
Citation
M. Tsujino, T. Sano, N. Ozaki, O. Sakata, M. Okoshi, N. Inoue, R. Kodama, A. Hirose, "Femtosecond Laser Synthesis of High-Pressure Phases of Si", Advanced Materials Research, Vols. 26-28, pp. 1291-1294, 2007
Online since
October 2007
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Price
$32.00
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