Paper Title:
Crystal Structure and Thermoelectric Properties of ReSi1.75 Based Alloys
| Periodical | Advanced Materials Research (Volumes 26 - 28) |
|---|---|
| Main Theme | Advanced Materials and Processing |
| Edited by | Young Won Chang, Nack J. Kim and Chong Soo Lee |
| Pages | 197-200 |
| DOI | 10.4028/www.scientific.net/AMR.26-28.197 |
| Citation | Shunta Harada et al., 2007, Advanced Materials Research, 26-28, 197 |
| Online since | October, 2007 |
| Authors | Shunta Harada, Katsushi Tanaka, Kyosuke Kishida, Haruyuki Inui |
| Keywords | Crystal Structure, Ordered Vacancy, Silicide, TEM, Thermoelectric Material |
| Price | US$ 28,- |
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Abstract
Effect of the ternary element of Mo on the crystal structure and thermoelectric properties of ReSi1.75 has been investigated. The crystal structure of Mo-containing ReSi1.75 has shear structure up to 1.5 at%, the structure changes into adaptive structure at larger Mo contents. The concentration of Si vacancies estimated from the crystal structures determined decreases with increasing Mo content. Thermoelectric properties of Mo-containing ReSi1.75 indicate that the character changes from p- to n-type semiconductor upon alloying with Mo, which is explained by the decrease in Si vacancy concentration.