Paper Title:

Crystal Structure and Thermoelectric Properties of ReSi1.75 Based Alloys

Periodical Advanced Materials Research (Volumes 26 - 28)
Main Theme Advanced Materials and Processing
Edited by Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages 197-200
DOI 10.4028/www.scientific.net/AMR.26-28.197
Citation Shunta Harada et al., 2007, Advanced Materials Research, 26-28, 197
Online since October, 2007
Authors Shunta Harada, Katsushi Tanaka, Kyosuke Kishida, Haruyuki Inui
Keywords Crystal Structure, Ordered Vacancy, Silicide, TEM, Thermoelectric Material
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Abstract

Effect of the ternary element of Mo on the crystal structure and thermoelectric properties of ReSi1.75 has been investigated. The crystal structure of Mo-containing ReSi1.75 has shear structure up to 1.5 at%, the structure changes into adaptive structure at larger Mo contents. The concentration of Si vacancies estimated from the crystal structures determined decreases with increasing Mo content. Thermoelectric properties of Mo-containing ReSi1.75 indicate that the character changes from p- to n-type semiconductor upon alloying with Mo, which is explained by the decrease in Si vacancy concentration.