Paper Title:
Fabrication of Ta-Al-N Thin Films and its Cu Diffusion on Barrier Properties
  Abstract

Ta-Al-N thin films on Si wafer were prepared by RF reactive magnetron sputtering in a N2/Ar ambient. Then the stacked structures of Cu/Ta-Al-N/Si were prepared and annealed at temperatures varied from 400°C to 900°C for 5 minutes in a N2 ambient tube. Four-point probe (FPP) sheet resistance measurement, Atomic force microscope (AFM), Scanning electron microscope(SEM), Alpha-Step IQ Profilers and X-ray Diffraction(XRD) were used to investigate the composition, morphology and the diffusion barrier properties of the thin films. The results show that with the increasing of Al component, the surface of Ta-Al-N thin-films became finer, the sheet resistance became higher, and after annealing at 800°C/300S FA, Cu diffusion through Ta-Al-N barrier didn’t not occurred. Results show that Ta-Al-N thin-films could act as diffusion barrier for new generation integrated circuits due to its excellent high temperature properties.

  Info
Periodical
Advanced Materials Research (Volumes 26-28)
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
593-596
DOI
10.4028/www.scientific.net/AMR.26-28.593
Citation
Y. Z. Li, J. C. Zhou, "Fabrication of Ta-Al-N Thin Films and its Cu Diffusion on Barrier Properties", Advanced Materials Research, Vols. 26-28, pp. 593-596, 2007
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Y.W. Lee, S.M. Yoon, J.J. Lim, Ying Hu, Chun Gon Kim, Chong Oh Kim
Abstract:Magnetic tunnel junctions(MTJ) are fabricated as a function of the input power of Al thin film. Al thin films have pseudo-crystalline...
1053
Authors: C. Koliakoudakis, J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou, Konstantinos Zekentes
Abstract:The behavior of 200nm Cr Schottky contacts on n-type 4H-SiC has been investigated with photoelectron spectroscopy (XPS) and standard (I-V and...
651
Authors: Wei Zhou Li, Yue Qiao Li, Dan Qing Yi, Hui Qun Liu
Abstract:To decrease the interdiffusion, CrON interlayer as a diffusion barrier was introduced into the interface of NiCrAlY overlayer and DSM11...
206
Authors: Aun Shih Teh, Daniel C.S. Bien, Rahimah Mohd Saman, Soo Kien Chen, Kai Sin Tan, Hing Wah Lee
Chapter 8: Nanomaterials and Nanomanufacturing
Abstract:We report on the catalytic growth of multiwalled carbon nanotubes by plasma enhanced chemical vapor deposition using Ni and Co catalyst...
1201
Authors: Chi Yu Wang, Hung Pin Shiao, Po Wei Shieh, Hsin Hua Chang
Chapter 1: Materials Engineering and Processing Technologies of Materials
Abstract:Abstract. The effects of thermal annealing on the electrical and interfacial structure properties of Ni/Au on n-type GaN Schottky contacts...
241