Paper Title:
Recovery of Structural and Luminescent Properties in Zinc-Implanted ZnO Films
  Abstract

This paper reports that Zn ion implantation to a dose of 1 × 1017 ions/cm2 was performed on highly c-axis-orientated ZnO thin films deposited on Si (100) substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 300−500 oC. The effects of ion implantation and post-implantation annealing on the structural and luminescent properties of the ZnO films were investigated by x-ray diffraction, photoluminescence (PL). Results show that the intensities of (002) peak and photoluminescence (PL) were evidently decreased by Zn ion implantation. The recovery of (002) peak and photoluminescence occurs at ~300oC.

  Info
Periodical
Advanced Materials Research (Volumes 26-28)
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
629-632
DOI
10.4028/www.scientific.net/AMR.26-28.629
Citation
S. W. Xue, X. T. Zu, "Recovery of Structural and Luminescent Properties in Zinc-Implanted ZnO Films ", Advanced Materials Research, Vols. 26-28, pp. 629-632, 2007
Online since
October 2007
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Price
$32.00
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