Paper Title:
MOCVD Growth of SiC Nanowires Aiming at the Control of their Shape
  Abstract

We report the growth of silicon carbide (SiC) nanowires on silicon substrates by metal organic chemical vapor deposition (MOCVD) using dimethylvinyllsilane [CH2CHSi(CH3)Cl2] as a source gas and metal catalysts of Ni and Fe. Various growth conditions such as the growth temperature and the pressure of the source gas are examined to achieve high yield growth of SiC nanowires and to control their shape. No SiC nanowires were formed when using Fe. In contrast, by using Ni catalyst, numerous SiC nanowires of about 30 nm thick can be grown at the pressure of the source gas of 30 Pa at 800 °C. Their microstructure is revealed by scanning electron microscopy (SEM) and transmission electron microscope (TEM).

  Info
Periodical
Advanced Materials Research (Volumes 26-28)
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
657-660
DOI
10.4028/www.scientific.net/AMR.26-28.657
Citation
S. Takao, H. Kohno, S. Takeda, "MOCVD Growth of SiC Nanowires Aiming at the Control of their Shape", Advanced Materials Research, Vols. 26-28, pp. 657-660, 2007
Online since
October 2007
Keywords
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Price
$32.00
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