Paper Title:
Electronic Transport Properties of Tin-Filled Cobalt Antimonides
  Abstract

The encapsulated induction melting was attempted to prepare the Sn-filled CoSb3 skutterudites and their electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 823K for 6 days in vacuum. The Sn-filled CoSb3 showed p-type conductivity at 300K to 700K at it is a highly degenerate semiconductor. Lattice contribution was dominant to thermal conductivity and it was considerably reduced by Sn filling in the CoSb3 skutterudite.

  Info
Periodical
Advanced Materials Research (Volumes 26-28)
Edited by
Young Won Chang, Nack J. Kim and Chong Soo Lee
Pages
891-894
DOI
10.4028/www.scientific.net/AMR.26-28.891
Citation
J. Y. Jung, S. C. Ur, I. H. Kim, "Electronic Transport Properties of Tin-Filled Cobalt Antimonides", Advanced Materials Research, Vols. 26-28, pp. 891-894, 2007
Online since
October 2007
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Price
$32.00
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