Paper Title:
Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation
  Abstract

This paper is the results of oxygen ion implantation on morphological and electrical properties of indium phosphate (InP) semiconductor wafers. The oxygen ions were implanted at 30 keV and various doses in the range between 5×10 15 to 5×10 17 ions/cm2 and at nearly room temperature. The changes in surface roughness and resistivity before and after the implantation is studied using atomic force microscopy (AFM) and four-point probes technique, respectively. The results show that the resistivity is depend on the ion implantation dose. In addition, the RMS roughness of implanted samples dramatically increases by accumulation of oxygen ion dose.

  Info
Periodical
Advanced Materials Research (Volumes 264-265)
Edited by
M.S.J. Hashmi, S. Mridha and S. Naher
Pages
1312-1317
DOI
10.4028/www.scientific.net/AMR.264-265.1312
Citation
A.H. Ramezani, M.R. Hantezadeh, M. Ghoranneviss, A.H. Sari, "Measuring the Changes in InP Morphological and Electrical Specifications Caused by Oxygen Ion Implantation", Advanced Materials Research, Vols. 264-265, pp. 1312-1317, 2011
Online since
June 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: D. Krüger, R. Kurps, Peter Formanek, G. Weidner
77
Authors: Yuki Negoro, K. Katsumoto, Hiroyuki Matsunami, Tsunenobu Kimoto, Frank Schmid, Gerhard Pensl
913
Authors: W.J. Lee, Yoon B. Kim, W.Y. Lee, S.H. Han, J.H. Han, K.K. Jee
Abstract:Surface modification of polyimide(PI) films was treated with oxygen RIE by varying ion doses from 1x1016 to 1x1018 ions/cm2 at an ion beam...
1593
Authors: Yuichiro Nanen, Bernd Zippelius, Svetlana Beljakowa, Lia Trapaidze, Michael Krieger, Tsunenobu Kimoto, Gerhard Pensl
Abstract:The authors investigated the effect of preannealing on N-/Al-coimplanted and over-oxidized Metal-Oxide-Semiconductor Field Effect Transistors...
487
Authors: Xi Song, Jérôme Biscarrat, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Thierry Chassagne, Marc Portail, Emmanuel Collard, Daniel Alquier
Chapter 4: Characterization: Devices and Material
Abstract:In this paper, we studied the influence of nitrogen implantation dose on both physical and electrical properties in 3C-SiC grown on Si (100)...
154