Paper Title:
Microstructure Evolution in Nitrogen Implanted Sapphire
  Abstract

Low-energy 14N+ ions were implanted with 23 keV under normal incidence into C-axis (0001) sapphire at room temperature. DYNAMIC-TRIM calculations were performed to calculate the N depth profiles for the various fluences from 1x1016 to 1017 cm-2. Electron Beam Annealing (EBA) was performed at a sample temperature of 700 °C for 10 min to allow the implanted and substrate atoms in the implanted layer to move to energetically preferable positions. Nuclear Reaction Analysis revealed the implanted nitrogen ion concentrations. Atomic Force Microscopy and Scanning Electron Microscopy show some nanostructures at the surface of the sapphire substrate exhibiting an average width of 139 ± 25 nm and height of 37 ± 7 nm using the lowest fluence of 1x1016 ions cm-2. Notably for samples implanted with the highest fluence of 1x1017 ions cm-2, bubble/holes like structures appeared after EBA due to out-diffusion of nitrogen that causes blistering and exfoliation effects.

  Info
Periodical
Edited by
George Ferguson, Ashvin Thambyah, Michael A Hodgson and Kelly Wade
Pages
222-225
DOI
10.4028/www.scientific.net/AMR.275.222
Citation
J. Kennedy, J. Leveneur, P. P. Murmu, A. Markwitz, "Microstructure Evolution in Nitrogen Implanted Sapphire", Advanced Materials Research, Vol. 275, pp. 222-225, 2011
Online since
July 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov
Abstract:The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a function...
137
Authors: Hong Hua Zhang, Wei Min Gao, Y.L. Shen, B.S. Li
Abstract:Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to...
287
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625