Paper Title:
Light Emission from a Si Based ZnO Structure
  Abstract

A novel silicon-based light emitting structure comprising a lithium doped zinc oxide film and a high energy electrons generating silicon structure is presented. Red light emission with wavelength of ~630 nm is generated and recorded in electroluminescent spectrum under an applied DC voltage of 8.5 V.

  Info
Periodical
Edited by
George Ferguson, Ashvin Thambyah, Michael A Hodgson and Kelly Wade
Pages
89-92
DOI
10.4028/www.scientific.net/AMR.275.89
Citation
F. Chen, X. H. Zhan, C. W. Zou, Z. Salcic, W. Gao, "Light Emission from a Si Based ZnO Structure", Advanced Materials Research, Vol. 275, pp. 89-92, 2011
Online since
July 2011
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