Paper Title:
Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
  Abstract

The effects of high energy electron irradiation and high magnetic fields (up to 14 T) on the electrical characteristics of recrystallized p-type polysilicon-on-insulator layers were studied. The aim of the paper is to obtain the material suitable to create the sensors operating in harsh conditions.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
109-116
DOI
10.4028/www.scientific.net/AMR.276.109
Citation
A. Druzhinin, I. Marymova, I. Kogut, Y. Khoverko, "Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields", Advanced Materials Research, Vol. 276, pp. 109-116, 2011
Online since
July 2011
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