Paper Title:
3D SOI Elements for System-on-Chip Applications
  Abstract

Base technology of local 3D SOI-structures formation has been proposed. Using this technology the electrical characteristics were developed and simulated of following original device elements for the microsystem applications: standard and matrix SOI CMOS-transistors with 3D gates, switching elements on Schottky diodes, contact electrodes with 3D surface, elements for highly sensitive integral accelerometers with registration of a field emission current, hermetical microcavities and microchannels under the surface of a SOI-substrate, field emission silicon microcathodes.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
137-144
DOI
10.4028/www.scientific.net/AMR.276.137
Citation
I.T. Kogut, A.A. Druzhinin, V.I. Holota, "3D SOI Elements for System-on-Chip Applications", Advanced Materials Research, Vol. 276, pp. 137-144, 2011
Online since
July 2011
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