Paper Title:
Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon
  Abstract

The paper presents the results of electrical characterization of the interface and bulk properties of high-k Gd2O3 and Nd2O3 dielectrics epitaxially grown on silicon substrates. The limitations of the conductance technique for correct determination of the interface state density due to the presence of leakage currents through the dielectric are discussed. The charge carrier transport through the dielectric film was found to occur via the variable-range hopping conductance mechanism. The density of the interface states and their energy distribution for (100) and (111) Si orientation and the Gd2O3/Si and Nd2O3/Si interfaces were determined. The density and energy location of the bulk localized states in the band gap of the Gd2O3 and Nd2O3 dielectrics were estimated and a plausible nature of the observed defects was suggested.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
167-178
DOI
10.4028/www.scientific.net/AMR.276.167
Citation
Y.Y. Gomeniuk, Y.V. Gomeniuk, A. Nazarov, V.S. Lysenko, H.J. Osten, A. Laha, "Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon", Advanced Materials Research, Vol. 276, pp. 167-178, 2011
Online since
July 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Lars S. Løvlie, Ioana Pintilie, S. Kumar C.P., Ulrike Grossner, Bengt G. Svensson, Svetlana Beljakowa, Sergey A. Reshanov, Michael Krieger, Gerhard Pensl
Abstract:The purpose of this work is to compare the density of shallow interface states (Dit) at the interface of SiO2/SiC MOS capacitors as deducted...
497
Authors: Jun Liu, Jin Liang He, Jun Hu, Wang Chen Long, Feng Chao Luo
Abstract:ZnO varistors are multicomponent polycrystalline ceramics with highly nonlinear current-voltage characteristics and surge energy absorption...
382
Authors: David Mateos, Nicola Nedev, Diana Nesheva, Mario Curiel, Emil Manolov, Abraham Arias, Oscar Contreras, Benjamin Valdez, Zelma Levi, Jesus M. Siqueiros
Abstract:Metal-Oxide-Semiconductor structures with silicon nanocrystals in the oxide layer are prepared and characterized by Transmission Electron...
150
Authors: Stefan Noll, Martin Rambach, Michael Grieb, Dick Scholten, Anton Bauer, Lothar Frey
Chapter III: Processing of SiC
Abstract:Current power MOSFET devices on Silicon Carbide show a limited inversion channel mobility, which can be a result of the expected very high...
476