Paper Title:
The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors
  Abstract

Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by the chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
195-202
DOI
10.4028/www.scientific.net/AMR.276.195
Citation
V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V. Strelchuk, N.I. Tarbaev, "The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors", Advanced Materials Research, Vol. 276, pp. 195-202, 2011
Online since
July 2011
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