Paper Title:
Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures
  Abstract

This paper presents an analysis of the electrical characteristics of the amorphous silicon carbide films deposited on the SiO2/Si substrate. Aspects of RF plasma treatment on electrical and structural characteristics of a-SiC film are discussed. It is demonstrated that the dominant mechanism of current transport in the a-SiC thin film is determined by variable-range hopping conductivity at the Fermi level. Studies of the a-SiC film at temperatures from 300 K to 600 K also indicate that silicon carbide is a perspective material for fabrication of temperature sensor.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
21-25
DOI
10.4028/www.scientific.net/AMR.276.21
Citation
S.O. Gordienko, A. Nazarov, A.V. Rusavsky, A.V. Vasin, N. Rymarenko, V.G. Stepanov, T.M. Nazarova, V.S. Lysenko, "Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures", Advanced Materials Research, Vol. 276, pp. 21-25, 2011
Online since
July 2011
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