Paper Title:
Hydrogen Gettering within Processed Oxygen-Implanted Silicon
  Abstract

Hydrogen gettering by implantation-disturbed buried layers in oxygen-implanted silicon (Si:O, prepared by O2+ implantation at energy 200 keV and doses 1014 cm-2 and 1017 cm-2) was investigated after annealing of Si:O at up to 1570 K, also under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing conditions, buried layers containing SiO2-x clusters and/or precipitates were formed. To produce Si:O,H, Si:O samples were subsequently treated in RF hydrogen plasma. As determined by Secondary Ion Mass Spectrometry, hydrogen was accumulated at the sample surface and within implantation-disturbed areas. It was still present in Si:O,H (D=1017 cm–2) even after subsequent annealing at up to 873 K. Hydrogen accumulation within disturbed areas of Si:O as well as of SOI can be used for recognition of defects in such structures.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
35-40
DOI
10.4028/www.scientific.net/AMR.276.35
Citation
A. Misiuk, A. Barcz, J. Bak-Misiuk, A. G. Ulyashin, P. Romanowski, "Hydrogen Gettering within Processed Oxygen-Implanted Silicon", Advanced Materials Research, Vol. 276, pp. 35-40, 2011
Online since
July 2011
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$32.00
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