Paper Title:
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
  Abstract

Theoretical model of thin film SOI MISFET based on the gate control of impact ionization avalanche in the drain induced p-n+ junction is developed. Such operation principle opens a way of the creation of transistors with high transconductance and operation frequency, and switching between the ON and OFF states by low gate voltage variation.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
43-49
DOI
10.4028/www.scientific.net/AMR.276.43
Citation
V. Dobrovolsky, F. Sizov, S. Cristoloveanu, "Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model", Advanced Materials Research, Vol. 276, pp. 43-49, 2011
Online since
July 2011
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