Paper Title:
Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
  Abstract

A semi-analytical model which is applicable to description of ballistic field-effect transistors with low-dimensional channels is proposed. For instance, such transistors can be manufactured on a “silicon-on-insulator” wafer. The model accounts for single-gate and double-gate structures with one-dimensional and two-dimensional channels. It differently describes the regimes of a transistor above threshold and below threshold. The first implies an essential influence of charge inside the channel on a potential distribution; the second supposes a negligible charge inside the channel. Both approaches are mainly based upon an approximate solution of the Poisson equation.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
51-57
DOI
10.4028/www.scientific.net/AMR.276.51
Citation
A. Kohmyakov, V. Vyurkov, "Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels", Advanced Materials Research, Vol. 276, pp. 51-57, 2011
Online since
July 2011
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