Paper Title:
Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
  Abstract

Mobility degradation during gate length scaling is a well established experimental fact, which is confirmed also by Monte –Carlo simulation. We have analyzed the physical reason for this degradation using experimental and modeling data obtained in classic drift-diffusional approximation with electric field dependences of electron mobility. We have shown that this dependence is a main reason for mobility degradation in nanoscale FETs, which means also that the same reason will limit the drain current in future post-silicon CMOS generation with new materials like narrow band III/V compounds or graphene with the highest carrier velocity near 108 cm/s.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
59-65
DOI
10.4028/www.scientific.net/AMR.276.59
Citation
V.P. Popov, M.A. Ilnitsky, "Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs", Advanced Materials Research, Vol. 276, pp. 59-65, 2011
Online since
July 2011
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