Paper Title:
High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
  Abstract

The effect of elevated temperature on the harmonic distortion in Graded-Channel MOSFETs is presented in this work. The Graded-Channel devices show interesting advantages in terms of nonlinear behavior compared to classical devices especially at higher temperatures up to 200°C.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
67-75
DOI
10.4028/www.scientific.net/AMR.276.67
Citation
M. Emam, M.A. Pavanello, F. Danneville, D. Vanhoenacker-Janvier, J. P. Raskin, "High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs", Advanced Materials Research, Vol. 276, pp. 67-75, 2011
Online since
July 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Lin Cheng, Janna R. B. Casady, Michael S. Mazzola, V. Bondarenko, Robin L. Kelley, Igor Sankin, J. Neil Merrett, Jeff B. Casady
Abstract:In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with...
1183
Authors: Ronald Green, Aderinto Ogunniyi, Dimeji Ibitayo, Gail Koebke, Mark Morgenstern, Aivars J. Lelis, Corey Dickens, Brett A. Hull
Abstract:In this paper, large area (0.18cm2) SiC DMOSFETs with 1.2 kV and 20 A rating are evaluated for power electronic switching applications. A...
1135
Authors: Kiran Chatty, David C. Sheridan, Volodymyr Bondarenko, Robin Schrader, Jeffrey B. Casady
Chapter 10: Device and Application
Abstract:We report a 900V 4H-SiC depletion mode (DM) VJFET with a specific on-resistance (RDSON,SP) of 1.46mOhm-cm2 at...
915
Authors: Shen Li Chen, Hsin Yang Shih
Chapter 4: Mechanical Engineering and Manufacturing
Abstract:In this work, we apply the Hauser technique and combine a newer inversion layer charge model to extract the effective channel carrier...
1709
Authors: Atsushi Ohoka, Nobuyuki Horikawa, Tsutomu Kiyosawa, Haruyuki Sorada, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda, Eiji Fujii
Chapter 5: Devices and Circuits
Abstract:Device technologies of SiC MOSFETs have nearly matured to the level of mass production and one of the remaining tasks is to serve better...
911