Paper Title:
Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
  Abstract

The paper discusses some issues of modeling the MOS tunnel structure with a gate stack containing a semiconductor quantum well (double barrier MOS system). The considerations are illustrated by simulations with the use of a theoretical model. Results of simulations are compared with experimental characteristics of fabricated DB MOS diodes.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
77-85
DOI
10.4028/www.scientific.net/AMR.276.77
Citation
B. Majkusiak, A. Mazurak, "Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures", Advanced Materials Research, Vol. 276, pp. 77-85, 2011
Online since
July 2011
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Price
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