Paper Title:
Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs
  Abstract

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
87-93
DOI
10.4028/www.scientific.net/AMR.276.87
Citation
Y.Y. Gomeniuk, Y.V. Gomeniuk, A. Nazarov, P.K. Hurley, K. Cherkaoui, S. Monaghan, P.E. Hellström, H.D.B. Gottlob, J. Schubert, J.M.J. Lopes, "Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs", Advanced Materials Research, Vol. 276, pp. 87-93, 2011
Online since
July 2011
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Price
$32.00
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