Paper Title:
Effects of High–Energy Neutrons on Advanced SOI MOSFETs
  Abstract

This work discusses the degradations caused by high-energy neutrons in advanced MOSFETs and compares them with damages created by γ-rays reviewing the original researches performed in our laboratory during last years [1-6]. Fully–depleted (FD) Silicon-on-Insulator (SOI) MOSFETs and Multiple-Gate (MuG) FETs with different geometries (notably gate lengths down to 50 nm) have been considered. The impact of radiation on device behavior has been addressed through the variation of threshold voltage (VT), subthreshold slope (S), transconductance maximum (Gmmax) and drain-induced barrier lowering (DIBL). First, it is shown that degradations caused by high-energy neutrons in FD SOI and MuG MOSFETs are largely similar to that caused by γ-rays with similar doses [1,3]. Second, it is revealed that, contrarily to their generally-believed immunity to irradiation [7, 8], very short-channel MuGFETs with thin gate oxide can become extremely sensitive to the total dose effect [2,3]. The possible reason is proposed. Third, a comparative investigation of high-energy neutrons effects on strained and non-strained devices demonstrates a clear difference in their response to high-energy neutrons exposure [6]. Finally, based on simulations and modeling of partially –depleted (PD) SOI CMOS D Flip-Flop, we show how radiation-induced oxide charge and interface states build-up can affect well-known tolerance of SOI devices to transient effects [4,5].

  Info
Periodical
Edited by
Alexei N. Nazarov and Jean-Pierre Raskin
Pages
95-105
DOI
10.4028/www.scientific.net/AMR.276.95
Citation
V. Kilchytska, J. Alvarado, O. Militaru, G. Berger, D. Flandre, "Effects of High–Energy Neutrons on Advanced SOI MOSFETs", Advanced Materials Research, Vol. 276, pp. 95-105, 2011
Online since
July 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Bun Tsuchiya, S. Nagata, Kesami Saito, Kentaro Toh, Tadaaki Shikama
Abstract:Radiation induced changes in electrical properties of calcium-zirconium-indium oxide ceramics (CaZr0.9In0.1O3-d) were investigated using a...
579
Authors: H. Ohyama, K. Takakura, T. Nagano, M. Hanada, S. Kuboyama, Eddy Simoen, Cor Claeys
Abstract:The degradation and recovery behavior of device performance on GaAlAs LEDs (Light emitting diodes) irradiated by 2-MeV electrons and 70-MeV...
119
Authors: Shigeomi Hishiki, Naoya Iwamoto, Takeshi Ohshima, Hisayoshi Itoh, Kazu Kojima, K. Kawano
Abstract:The effect of the fabrication process of n-channel 6H-SiC MOSFETs on their radiation resistance is investigated. MOSFETs that post...
707
Authors: Itsara Srithanachai, Surada Ueamanapong, Poopol Rujanapich, Amporn Poyai, Surasak Niemcharoen, Wisut Titiroongruang
Abstract:An effect induced by x-ray irradiation on Boron-doped crystalline Si at room temperature was closely investigated in this paper. Irradiation...
561
Authors: Yue Hu, Hao Wang, De Wen Wang, Cai Xia Du, Miao Miao Ma, Jin Yang, Jin He
Chapter 7: Nanomaterials, Microelectronic Materials and New Functional Materials
Abstract:A 600V-class lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) in partial...
514