Paper Title:
Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel
  Abstract

This paper reports a study of Ba0.9Sr0.1TiO3 films deposited on Pt/Ti/SiO2/Si substrates. The annealing temperatures were 750°C, 850°C and 950°C. An increase of the average size of grains was observed, from 60 nm at 750°C to 110 nm at 950°C, as well as an increase of the dielectric constant, remnant polarization and tunability. When the annealing time was decreased from 1 hour to 15 min, the dielectric constant and remnant polarization values have been increased. The optimized annealing conditions (950°C for 15 min) give the following results: εr = 780 and tgδ = 0.01 at 100 kHz, Pr = 13 µC/cm², Ec = 63 kV/cm and a tunability of 55%.

  Info
Periodical
Edited by
Bondan Tiara Sofyan
Pages
1-10
DOI
10.4028/www.scientific.net/AMR.277.1
Citation
D. Fasquelle, M. Mascot, J.C. Carru, "Electrical Properties Optimization of Ba0.9Sr0.1TiO3 Thin Films Deposited by Sol-Gel", Advanced Materials Research, Vol. 277, pp. 1-10, 2011
Online since
July 2011
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