Paper Title:
Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System
  Abstract

In the present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst, whose resistance-temperature characteristic curve was studied. Experiments results proved that the boron-doped diamond has different ionization energy in different temperature interval and the reasons were analyzed. The maximum operating temperature is about 773K for such boron-doped diamond. The research provides experimental basis for high-temperature semiconductor diamond.

  Info
Periodical
Chapter
I. Solid Materials
Edited by
Fei Hu and Beibei Wang
Pages
111-114
DOI
10.4028/www.scientific.net/AMR.279.111
Citation
J. H. Gong, S. X. Lin, J. Gao, "Crystal Structure and Resistance-Temperature Characteristic of the Boron-Doped Diamonds Synthesized from Fe-Ni-C-B System", Advanced Materials Research, Vol. 279, pp. 111-114, 2011
Online since
July 2011
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