Paper Title:

An Alkaline SiO2 Slurry for Fine Atomizing CMP

Periodical Advanced Materials Research (Volume 279)
Main Theme Mechanics, Solid State and Engineering Materials
Edited by Fei Hu and Beibei Wang
Pages 258-261
DOI 10.4028/www.scientific.net/AMR.279.258
Citation Jing Zhai et al., 2011, Advanced Materials Research, 279, 258
Online since July, 2011
Authors Jing Zhai, Zi Feng Ni, Qing Zhong Li
Keywords CMP, Fine Atomization, Polishing Slurry
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Abstract

A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23% of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol% compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional CMP (3.0nm).