Paper Title:
A Fine Atomization CMP Slurry for Copper
  Abstract

In this paper, a kind of alkaline slurry was introduced, in which silica was used as the abrasive, H2O2 was used as the oxidize, glycine was used as the complexing agent, azimidobenzene was used as the surfactant, and borax was used as the pH regulator. The atomization polishing method was used, and the effects of the traditional polishing and atomization polishing were compared. After the atomization polishing, the surface roughness of copper was 7.61 nm and the material removal rate was 188 nm/min; After the traditional polishing, the surface roughness was 15.22 nm and the material removal rate was 236 nm/min. The dosage of polishing slurry used in the atomization polishing is dozens of times less than that in the traditional polishing.

  Info
Periodical
Chapter
II. Solid Mechanics
Edited by
Fei Hu and Beibei Wang
Pages
271-274
DOI
10.4028/www.scientific.net/AMR.279.271
Citation
H. Zhang, Z. F. Ni, Q. Z. Li, "A Fine Atomization CMP Slurry for Copper", Advanced Materials Research, Vol. 279, pp. 271-274, 2011
Online since
July 2011
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