Paper Title:
Numerical Simulation of AlxGa1-XN/GaN Hetero Junction Quantum Well by AMPS-1D
  Abstract

In this work, the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D) is used to study the performances of depth of AlxGa1-xN/GaN heterojunction quantum well. The calculated results of AMPS-1D software show that the effect of different Al composition on the depth of AlxGa1-xN/GaN heterojunction quantum well is slight. On the other hand, the effect of different doped concentration in AlxGa1-xN is obvious.

  Info
Periodical
Advanced Materials Research (Volumes 282-283)
Chapter
Chapter 3: Material Science, Chemistry and Information Technology
Edited by
Helen Zhang and David Jin
Pages
518-521
DOI
10.4028/www.scientific.net/AMR.282-283.518
Citation
K. J. Zhang, B. Wan, "Numerical Simulation of AlxGa1-XN/GaN Hetero Junction Quantum Well by AMPS-1D", Advanced Materials Research, Vols. 282-283, pp. 518-521, 2011
Online since
July 2011
Authors
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Price
$32.00
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