Paper Title:
Preparation of Ta-Ti Co-Doped VO2 Polycrystal Thin Film with High Resistance Temperature Coefficient and without Hysteresis
  Abstract

Using vanadyl acetylacetonate (C10H14O5V) as precursor, use Tantalum Ethoxide (Ta(OC2H5)5) and Tetrabutyl titanate (C16H36O4Ti)as doper, by sol-gel method fabricate Ta, Ti mono doping and Ta-Ti co-doped V1-x-yTaxTiyO2 thin film. XRD spectrum indicated that the film was oriented in (011) direction. XPS results indicated the valence state of V, Ta, Ti in the film is +4, at all. While Ta mono doping, single 1at.%Ta can deduce the phase transiton temperature (Tt) by 7.8°C, phase transition hysteresis (ΔT) by 1°C. When the doping rate is 6at.%, Tt=22°C, ΔT=1°C. Ti dopings has little affection to Tt but deduce ΔT obviously. Ta-Ti co-doped V0.93Ta0.06Ti0.01O2 film thin films without phase transition hysteresis were also fabricated, and its TCR is as high as -7.58%/K at 25°C.

  Info
Periodical
Advanced Materials Research (Volumes 284-286)
Chapter
Optical/Electronic/Magnetic Materials
Edited by
Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu
Pages
2177-2181
DOI
10.4028/www.scientific.net/AMR.284-286.2177
Citation
M. P. Jiang, M. Zhao, J. H. Li, "Preparation of Ta-Ti Co-Doped VO2 Polycrystal Thin Film with High Resistance Temperature Coefficient and without Hysteresis", Advanced Materials Research, Vols. 284-286, pp. 2177-2181, 2011
Online since
July 2011
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Price
$32.00
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