Paper Title:
Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material
  Abstract

Electrical behaviors of light-emitting diodes (LEDs) prepared by wide-band GaN material were measured accurately using alternating-current (AC) small-signal together with an I-V plot. An abnormal negative capacitance (NC) was observed in all measurend LEDs, and at the same voltage the lower the frequency is, the more obvious NC is. Form the slopes of ln(I)-V plot and the relation between NC and voltage the ideality factor was approximately obtained.

  Info
Periodical
Advanced Materials Research (Volumes 284-286)
Chapter
Optical/Electronic/Magnetic Materials
Edited by
Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu
Pages
2202-2206
DOI
10.4028/www.scientific.net/AMR.284-286.2202
Citation
Y. Li, D. Li, C. D. Wang, L. F. Feng, "Electrical Behaviors of LEDs Prepared by Wide-Band GaN Material", Advanced Materials Research, Vols. 284-286, pp. 2202-2206, 2011
Online since
July 2011
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Price
$32.00
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