Paper Title:
Simulation of Electron Transport in Silicon using Monte Carlo Method
  Abstract

A Monte Carlo method is employed to investigate the properties of electron transport with considerations of electron-phonon scattering including intervalley scattering and intravalley scattering. Under different electric fields, the coupling relations between electrons and phonons are studied, and the behaviors of absorbing and releasing phonons from electrons are also analyzed. The results show the scattering events of absorbing phonons from electrons decrease with the increasing simulation time. At the same temperature, the mean free path of electron increases initially and then decreases with the increasing electric field intensity, and finally approaches an asymptotic value.

  Info
Periodical
Advanced Materials Research (Volumes 284-286)
Chapter
Micro/Nano Materials
Edited by
Xiaoming Sang, Pengcheng Wang, Liqun Ai, Yungang Li and Jinglong Bu
Pages
871-874
DOI
10.4028/www.scientific.net/AMR.284-286.871
Citation
Z. Wang, L. Quan, Y. W. Ruan, "Simulation of Electron Transport in Silicon using Monte Carlo Method", Advanced Materials Research, Vols. 284-286, pp. 871-874, 2011
Online since
July 2011
Export
Price
$32.00
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