Paper Title:
Effect of Substrate Temperature on Properties of CuInSe2 Thin Films Deposited by Magnetron Sputtering
  Abstract

CuInSe2 thin films were successfully deposited by magnetron RF-sputtering at different substrates temperature (100°C, 200°C, 300°C, 400°C, and 500°C). Effect of substrate temperature on these films crystallization, morphologies, and electrical properties were investigated. Results showed that increase of substrate temperature is in favor to be constituted in a chalcopyrite phase with a preferential orientation of (112), (211) and (312). The morphology images implied the film deposited at 200 oC had smoother surface than others. Furthermore, it was indicated that substrates temperature of 200°C had the best electrical and optical properties among these samples.

  Info
Periodical
Advanced Materials Research (Volumes 287-290)
Chapter
Thin Films
Edited by
Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li
Pages
2131-2135
DOI
10.4028/www.scientific.net/AMR.287-290.2131
Citation
Z. Yan, X. Ji, M. Li, Y. M. Mi, "Effect of Substrate Temperature on Properties of CuInSe2 Thin Films Deposited by Magnetron Sputtering", Advanced Materials Research, Vols. 287-290, pp. 2131-2135, 2011
Online since
July 2011
Export
Price
$32.00
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