Paper Title:
Growth of ZnS Films and Application in Heterojunction
  Abstract

ZnS films were prepared by radio-frequency (RF) magnetron sputtering method. The effects of substrate temperature and annealing treatment on the properties of ZnS films were studied. The ZnS films were characterized by X-ray diffraction (XRD), UV-visible spectrophotometer, and electrical measurements. The results showed that the higher substrate temperature and post-deposition annealing treatment was helpful in improving the crystalline quality of the films, and the film had an n-type conductivity. N-type ZnS films were also deposited on p-type single-crystalline silicon (Si) substrates to fabricate ZnS/ Si heterojunction. The current-voltage (I-V) characteristic of the heterojunction was examined, which showed a rectifying behavior with turn-on voltage of about 2V.

  Info
Periodical
Advanced Materials Research (Volumes 287-290)
Chapter
Thin Films
Edited by
Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li
Pages
2140-2143
DOI
10.4028/www.scientific.net/AMR.287-290.2140
Citation
J. Huang, L. J. Wang, K. Tang, J. J. Zhang, W. M. Shi, Y. B. Xia, X. G. Lu, "Growth of ZnS Films and Application in Heterojunction", Advanced Materials Research, Vols. 287-290, pp. 2140-2143, 2011
Online since
July 2011
Keywords
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Price
$32.00
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