Paper Title:
Spectroscopic Ellipsometry Study on HfO2 Thin Films Deposited at Different RF Powers
  Abstract

HfO2 thin films were prepared by radio frequency (RF) magnetron sputtering at different RF powers. The influence of RF power on optical properties of HfO2 thin films were investigated by spectroscopic ellipsometry (SE) toghther with high-resolution transmission electron microscopy (HR-TEM) and Fourier transform infrared spectroscopy (FTIR). The results show that there is a SiO2 interface layer between HfO2 thin film and Si substrate. A four layer structured model consisting of SiO2 interfacial layer was used to fit the SE data. With the increasing RF power, the refractive index of the HfO2 thin films increases firstly and then decreases and, the extinction coefficient of the HfO2 thin films increases little.

  Info
Periodical
Advanced Materials Research (Volumes 287-290)
Chapter
Thin Films
Edited by
Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li
Pages
2165-2168
DOI
10.4028/www.scientific.net/AMR.287-290.2165
Citation
W. T. Liu, Z. T. Liu, "Spectroscopic Ellipsometry Study on HfO2 Thin Films Deposited at Different RF Powers", Advanced Materials Research, Vols. 287-290, pp. 2165-2168, 2011
Online since
July 2011
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Price
$32.00
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