Paper Title:
Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Quality through a Novel Sulfuration Method
  Abstract

The absence of stable oxide/GaAs interface greatly holds back the step of GaAs-based MOSFETs fabrication. In this letter, we report on the chemical passivation of n-type GaAs surface by introducing a new sulfuration method. X-ray photon-electron spectroscopy (XPS) analyses indicate that most GaAs native oxides and elemental arsenic (As) can be more effectively removed by treating the GaAs surface in CH3CSNH2 solution compared to the traditional (NH4)2S solution. Capacitance-Voltage characteristics of the CH3CSNH2 treated MOS capacitors also presents reduced interfacial layer and equivalent oxide thickness which are well consisted with the conclusion obtained by XPS.

  Info
Periodical
Advanced Materials Research (Volumes 287-290)
Chapter
Thin Films
Edited by
Jinglong Bu, Pengcheng Wang, Liqun Ai, Xiaoming Sang, Yungang Li
Pages
2327-2331
DOI
10.4028/www.scientific.net/AMR.287-290.2327
Citation
G. M. Tan, Q. Q. Sun, H. L. Lu, P. F. Wang, S. J. Ding, D. W. Zhang, "Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Quality through a Novel Sulfuration Method", Advanced Materials Research, Vols. 287-290, pp. 2327-2331, 2011
Online since
July 2011
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Price
$32.00
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