Paper Title:
Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas
  Abstract

Al-doped ZnO (AZO) thin films were grown on Corning 1737 glass by RF Magnetron Sputtering under premixed hydrogen-argon (H2/Ar) sputtering gas. It is found that the introduction of various H2 concentrations during sputtering deposition altered the properties of Al-doped ZnO films. The presence of H2 during AZO growth at low deposition temperature leads to the growth of a-axis preferential orientation crystal whereas c-axis preferential orientation occurred only at higher deposition temperature. Highly oriented c-axis (002) crystal has been successfully grown under 3% H2 concentration at 200°C deposition temperature. Film’s resistivity is appeared to be a function of H2 concentration. Additional H2 concentration in sputtering gas increased of film’s transmittance up to 85% at visible-near infra red spectra while it caused the Burstein-Moss shift toward the blue region at 350 nm wavelength.

  Info
Periodical
Advanced Materials Research (Volumes 29-30)
Edited by
Deliang Zhang, Kim Pickering, Brian Gabbitas, Peng Cao, Alan Langdon, Rob Torrens and Johan Verbeek
Pages
215-218
DOI
10.4028/www.scientific.net/AMR.29-30.215
Citation
E. S. Lee, R. A. Wibowo, K. H. Kim, "Highly c-Axis Oriented Al-Doped ZnO Thin Films Grown in Premixed H2/Ar Sputtering Gas", Advanced Materials Research, Vols. 29-30, pp. 215-218, 2007
Online since
November 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ying Xue Yao, Shun Zhou Yu, Da Gang Xie
Abstract:Bonnet tool polishing, combined traditional optical polishing technique with modern NC technology, is an novel optical polishing technique....
707
Authors: Hiroyuki Shimizu, Yutaka Doshida, Satoshi Tanaka, Keizo Uematsu
Abstract:Recently, we have developed crystal-oriented sheet forming (COSF) process from green sheet process and high-magnetic-field method. We formed...
21
Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...
969
Authors: Wei Zhang, Mei Ling Yuan, Xian Yang Wang, Jun Ouyang
Chapter 6: Optical/Electronic/Magnetic Materials
Abstract:BaTiO3 (BTO) thin films were grown on (100) SrTiO3 (STO) single crystal substrates using the RF-magnetron sputtering...
926