Paper Title:
Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS
  Abstract

Low-k dielectric improves the switching speed by reducing the parasitic capacitance in integrated circuits. However it suffers the problem of copper diffusion. Forming gas (H2 + N2) plasma treatment on the surface of HSG-7000 low-k dielectric thin film has demonstrated to improve copper diffusion resistance. Two techniques using X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectroscopy (SIMS) have been used to examine the copper diffusion on this thin film. A thin layer of 10 nm with C-N bonds near the HSG-7000 surface were believed to be created by the plasma treatment and confirmed with XPS and SIMS and acts as barrier.

  Info
Periodical
Advanced Materials Research (Volumes 29-30)
Edited by
Deliang Zhang, Kim Pickering, Brian Gabbitas, Peng Cao, Alan Langdon, Rob Torrens and Johan Verbeek
Pages
347-350
DOI
10.4028/www.scientific.net/AMR.29-30.347
Citation
K.C. Aw, N.T. Salim, W. Gao, Z. W. Li, K. Prince, "Comparative Study of Copper Diffusion in Plasma Treated Low-k Dielectric Thin Film Using XPS and SIMS", Advanced Materials Research, Vols. 29-30, pp. 347-350, 2007
Online since
November 2007
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Price
$32.00
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