Paper Title:
A Fast Method for Analyzing the Effect of Mask Error on Photolithography Pattern Quality
  Abstract

As an important factor the error of mask pattern is often ignored in the lithography simulation model. To investigate the impact of mask errors on the lithographic pattern, effects of how the wave-front on different mask pattern region affects the field points in resist is first introduced, and based on this analysis a method is proposed to quickly judge the affection of round corner error of mask pattern on the photo-resist pattern. By comparing the actual effect area and the effective wave-front area around the corner on mask pattern, the method can illustrate the quantitative relationship between variation in photo-resist pattern and the related mask error. Finally the simulation results are verified by experiments. The study results may contribute to the fast and accurate judgments of error in the lithography, and provide important theoretical basis for lithography error correction.

  Info
Periodical
Advanced Materials Research (Volumes 291-294)
Chapter
NEMS/MEMS Technology and Devices
Edited by
Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu
Pages
3097-3102
DOI
10.4028/www.scientific.net/AMR.291-294.3097
Citation
M. J. Li, H. C. Ye, L. G. Shen, "A Fast Method for Analyzing the Effect of Mask Error on Photolithography Pattern Quality", Advanced Materials Research, Vols. 291-294, pp. 3097-3102, 2011
Online since
July 2011
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Price
$32.00
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