Paper Title:
Channel Direction Effect on the GaAs Mesfet Performances for MEMS Accelerometer Application
  Abstract

An experimental investigation has been carried out with clarifying the external mechanical stress effect on GaAs metal-semiconductor field-effect transistor (MESFET) I-V characteristic curve which as the sensitive element of micro-accelerometer in different condition. In this paper, we research different channel directions to explore the output characteristics of the GaAs MESFET which fabricated at the root of the cantilever. We design three channel directions which angled with the cantilever as 0 degree, 45 degree, 90 degree. We find that when the Channel direction parallel to the cantilever direction, ∆U has the maximum value of 12.13mv. The sensitivity of 0 degree is 0.04mv/g higher than the 90 degree. The dynamic result indicates that the channel direction parallel to the cantilever direction is the optimized design structure.

  Info
Periodical
Advanced Materials Research (Volumes 291-294)
Chapter
NEMS/MEMS Technology and Devices
Edited by
Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu
Pages
3121-3125
DOI
10.4028/www.scientific.net/AMR.291-294.3121
Citation
W. L. Shi, C. Y. Xue, Z. X. Tan, J. Liu, W. D. Zhang, "Channel Direction Effect on the GaAs Mesfet Performances for MEMS Accelerometer Application", Advanced Materials Research, Vols. 291-294, pp. 3121-3125, 2011
Online since
July 2011
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Price
$32.00
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