Paper Title:
A Novel Amorphous SiGe Material Used in CMOS Device
  Abstract

In this paper, we propose a novel material- amorphous silicon germanium(a-SiGe). The a-SiGe film was formed by PECVD at a low temperature and a low frequency. By adjusting the fraction x of Ge in Si1-xGex, optimal SiGe bandgap was achieved. We used amorphous silicon germanium alloy as MOSFET source/drain. The parameter of MOSFET shows that, as the fraction increases, the drain-to-source breakdown voltage increases. With reduction of the minority carrier inject ratio, the current gain β of parasitic BJT in MOSFET was reduced greatly, which eliminates the limit of the breakdown voltage of the device.

  Info
Periodical
Advanced Materials Research (Volumes 291-294)
Chapter
Modeling, Analysis and Simulation of Manufacturing Processes
Edited by
Yungang Li, Pengcheng Wang, Liqun Ai, Xiaoming Sang and Jinglong Bu
Pages
465-468
DOI
10.4028/www.scientific.net/AMR.291-294.465
Citation
W. Cui, S. L. Xu, P. Li, T. Ma, Y. H. Yang, "A Novel Amorphous SiGe Material Used in CMOS Device", Advanced Materials Research, Vols. 291-294, pp. 465-468, 2011
Online since
July 2011
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Price
$32.00
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