Highly polarized light transmission from GaN based light emitting diode is proposed using a double-layer metallic grating film and a dielectric transition layer. TM mode transmission and the polarized extinction ratio (ER) are calculated using commercial software, based on a full vector implementation of Rigorous Coupled Wave Analysis (RCWA) algorithm. Such a thin-film double-layer grating with subwavelength metallic stripes are designed and simulated by perfect parameters of period, thickness and filling factor for achieving good polarization properties. It is found that TM transmission and ER are almost stable and flat under different slit arrays of the double-layer grating. The polarized structure shows larger width of incident wavelength with a transition layer of a low refractive index than that of a high refractive index, but higher TM transmission and ER can be obtained for low refractive index transition layer. Flat sensitivity and high transmission of the TM mode on the double-layer metal grating thickness have been achieved. Up to 100nm range of the grating height can be employed to achieve TM transmission more than 92% while ER > 20dB. The results provide guidance in designing, optimizing and fabricating the integrated GaN-based and polarized photonic devices.