Paper Title:
Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method
  Abstract

The Ge mole fraction (x) of Si1-xGex layer was described by the C-V technique for Schottkey contact of single heterojunction Si1-xGex/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on the Si1-xGex/Si, and C-V technique was used to determine the carrier concentration and structure of double heterojunction Si/Si1-xGex/Si. The change of the structure between Si1-xGex/Si and Si/ Si1-xGex/Si was also observed by this method.

  Info
Periodical
Advanced Materials Research (Volumes 295-297)
Chapter
Chapter 1: Materials Properties
Edited by
Pengcheng Wang, Liqun Ai, Yungang Li, Xiaoming Sang and Jinglong Bu
Pages
1568-1572
DOI
10.4028/www.scientific.net/AMR.295-297.1568
Citation
L. H. Cheng, L. Yu, F. Yu, Z.Z. Lu, X. F. Zhao, P. Han, H. Zhao, Z.L. Xie, X.Q. Xiu, R. Zhang, Y.D. Zheng, "Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method", Advanced Materials Research, Vols. 295-297, pp. 1568-1572, 2011
Online since
July 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.